(4/5) based on 14 customer reviews
Description
Datasheet Jun 1, 1996 June 1996. NDT452AP . P-Channel Enhancement Mode Field Effect Transistor. General Description. Features Jul 14, 2015 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. NDT452AP . NDT452AP . SOT223-4. Jul 14, 2015. NDT452AP . SOT223-4.csv. FSCP. FSCP. 0.119. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp. Sn. Copper Alloy. voltage drop from BATT to system load at 1A load current with a NDT452AP MOSFET is ~60mV. The waste of battery power is ~60mW at 1A load. The transition BSP030. NDT452AP . BSP250. NDT454P. BSP250. NDT456P. BSP250. NTA4001NT1G. PMR280UN. NTA4153NT1G. PMR280UN. NTA7002NT1. PMR370XN.
| Part Number | NDT452AP |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET P-CH 30V 5A SOT-223-4 |
| Series | - |
| Packaging | |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 5A, 10V |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Image |  |
NDT452AP
Vishay Thin Film
4000
1.55
HONG KONG HORNG SHING LIMITED
NDT452AP
VISH
180
2.455
SUNTOP SEMICONDUCTOR CO., LIMITED
NDT452AP
Vishay / BC Components
12000
3.36
Shenzhen Yu Qin Xuan electronics Co., LT
NDT452AP
VISHAY GENERAL
101106
4.265
Shenzhen hsw Technology Co., Ltd
NDT452AP
Vishay Siliconix
4000
5.17
RX ELECTRONICS LIMITED
