(5/5) based on 17 customer reviews
Description
Package. TO-220AB. Lead (Pb)-free. IRL510PbF. SiHL510-E3. SnPb. IRL510 . SiHL510. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) . IRL510 -513. N-Channel Power Mosfets www.artschip.com. 1. Description. The devices are n-channel, enhancement mode, power. MOSFETs designed Page 1. Document Number: 90610 www.vishay.com. Revision: 08-Sep-10. 1. R-C Thermal Model Parameters. IRL510_RC, SiHL510_RC. Vishay Siliconix. IRL510 . 100. 10. 0.54 0.76 t, z. 5.6. 6.1. 43. IRF510. 100. 20. 0.54. 5.6. 8.3. 43. SUP90N15-18P. 150. 20. 0.018. 90. 64. 375. SUP28N15-52. 150. 20. 0.052 0.06. Page 1. HEXFET Power MOSFET. 07/23/10. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 18. ID @ TC = 100 C.
| Part Number | IRL510 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 100V 5.6A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 3.4A, 5V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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