(4/5) based on 17 customer reviews
Description
DATASHEET IRFP440 , SiHFP440. Vishay Siliconix. FEATURES. Dynamic dV/dt Rating. Repetitive Avalanche Rated. Isolated Central Mounting Hole. Fast Switching. MOSFET Designers Manual , IRFP440 Data. Sheet Page C-538, HBD-4, 1987. [ 4] Motorola, TMOS Power MOSFET Transistor. Device Data , MTW16N40E IRFP440 . 500. 850. 8.8. 5.6. 42. 20. 0.83. 150. IRFP440PBF. 500. 850. 8.8. 5.6. 42. 20. 0.83. 150. IRFP27N60K. 600. 220. 27. 18. 120. 57.3. 0.29. 500. IRF830 3.0 91 32 11.4 1.430.10 12.96. IRF840 1.7 180 63 6.472.83 0.19 9.49. IRFP440 1.7 180 63 6.472.830.19. 9.49. IRFP450 0.8 350 130 3.045.51 0.39 8.95.
| Part Number | IRFP440 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 8.8A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 5.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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