(4/5) based on 20 customer reviews
Description
DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Aug 10, 2004 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 50. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Nov 4, 2010 IRHNJ67230 2N7591U3 NEW. Page 2. IRHLNA77064 2N7604U2. Page 3. IRHY57Z30CM 2N7482T3. Page 4. IRHLNA797064 Jun 1, 2011 Description. The IRS2608D(S) is a high voltage, high speed power MOSFET an IGBT driver with dependent high and low side referenced
| Part Number | IRFP260 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 200V 46A TO247 |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 28A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD |
| Package / Case | TO-247-3 |
| Image |  |
IRFP260
Vishay Thin Film
12500
1.31
Bonase Electronics (HK) Co., Limited
IRFP260
VISH
5000
2.6025
NOSIN (HK) ELECTRONICS CO., LIMITED
IRFP260
Vishay / BC Components
19000
3.895
N&S Electronic Co., Limited
IRFP260
VISHAY GENERAL
5000
5.1875
Hong Kong Haoyue Starlight Industrial Co., Limited
IRFP260
Vishay Siliconix
9604
6.48
ATLANTIC TECHNOLOGY LIMITED
