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Description
Document Number: 91179 www.vishay.com. S-81273-Rev. A, 16-Jun-08. 1. Power MOSFET. IRFIBC20G , SiHFIBC20G. Vishay Siliconix. FEATURES. Isolated be any compatible ICs from the list above. MOSEFT and Gate Resistor. IC. FETS/IGBT Ron Roff Ton(ns) Toff (ns) Tr (ns) Tf (ns). Vbus. IR21814S IRFIBC20G . can be any compatible ICs from the list above. MOSEFT and Gate Resistor. IC. Transistor. Ron. Roff. Ton(ns) Toff (ns) Tr (ns) Tf (ns). Vbus. IR2127 IRFIBC20G . any compatible ICs from the list above. MOSEFT and Resistor Choice. IC. FETS/IGBT Rg-on Rg-off Ton(nS)Toff (nS) Tr(nS) Tf(nS) Vbus(V). IR2101 IRFIBC20G . can be any compatible ICs from the list above. MOSEFT and Gate Resistor. ICTested. FETS/IGBT. Ron Roff Ton (ns) Toff Tr Tf. Vbus (V). IR2110S. IRFIBC20G .
| Part Number | IRFIBC20G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 600V 1.7A TO220FP |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4 Ohm @ 1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Image |  |
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