(4/5) based on 6 customer reviews
Description
DATASHEET www.vishay.com. S-81290-Rev. A, 16-Jun-08. 1. Power MOSFET. IRFI820G , SiHFI820G. Vishay Siliconix. FEATURES. Isolated Package. High Voltage Rectifier. PD-9.641A. IRFI820G . HEXFET Power MOSFET. 0 lsolated Package. High Voltage Isolation: 2.5KVRMS (5). 0 Sink to Lead Creepage Dist.= 4.8mm. 1500. 3.1. 2. 25.3. 14.7. 3.6. 32. IRFI830GPBF. 500. 1500. 3.1. 2. 25.3. 14.7. 3.6. 32. IRFI820G . 500. 3000. 2.1. 1.3. 16. 8.7. 4.1. 30. IRFI820GPBF. 500. 3000. 2.1.
| Part Number | IRFI820G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 2.1A TO220FP |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Image |  |
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