Part Number | IRFBE20S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 800V 1.8A D2PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 6.5 Ohm @ 1.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFBE20S
Vishay Thin Film
1000
0.08
MY Group (Asia) Limited
IRFBE20S
VISH
10000
1.6375
Hong Kong Gihe Electronics Co., Limited
IRFBE20S
Vishay / BC Components
22580
3.195
Ysx Tech Co., Limited
IRFBE20S
VISHAY GENERAL
12200
4.7525
N&S Electronic Co., Limited
IRFBE20S
Vishay Siliconix
8344
6.31
Viassion Technology Co., Limited