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Description
Datasheet Document Number: 91094 www.vishay.com. S-81243-Rev. B, 21-Jul-08. 1. Power MOSFET. IRFB11N50A , SiHFB11N50A. Vishay Siliconix. FEATURES. Mar 30, 1999 Applicable Off Line SMPS Topologies: l Two Transistor Forward l Half & Full Bridge. IRFB11N50A www.irf.com. 1. G SD. Notes through are Apr 13, 2009 Uses IRFB11N50A , SiHFB11N50A data and test conditions. f. Drain current limited by maximum junction temperature. PRODUCT SUMMARY. IRFB11N50A . 24. M2. IRFB11N50A . 40. 16. U2. TL431. 13. R6. 10k out. R7. 86k. R8. 10k. C5. 470p. L3. 4.7uH. C2. 680uF. Part number = EEUFC1V681 int out. Oct 31, 2003 as Coss while VDS is rising from 0 to 80% VDSS. Uses IRFB11N50A data and test conditions. ISD 11A, di/dt 140A/ s, VDD V(BR)DSS,.
| Part Number | IRFB11N50A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 11A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1423pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Rds On (Max) @ Id, Vgs | 520 mOhm @ 6.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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