Vishay

Description

May 2, 2004 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per Aug 25, 1997 D. G. -14. -68. ISD -10A, di/dt -290A/ s, VDD V(BR)DSS,. TJ 175 C. Uses IRF9Z34N data and test conditions. t=60s, =60Hz Oct 1, 2009 The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. Aug 25, 1997 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per Low side drains inductor current. 2. During dead time body diode of low side conducts and keep inductor current flow. 3. At the moment high side is turned ON