Rated 
(5/5) based on 16 customer reviews
(5/5) based on 16 customer reviews
Description
Datasheet IRF9910 . MOSFET. Bottom 9.1m @4.5V, 15 nC. 5. SNVA228C May 2007 Revised May 2013. AN-1603 LM274X Reference Designs. Submit Documentation
| Part Number | IRF9910 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET 2N-CH 20V 10A 8-SOIC |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 12A |
| Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
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Vishay Thin Film
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Finestock Electronics HK Limited
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C & I Semiconductors Co., Limited
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VISHAY GENERAL
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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