(4/5) based on 18 customer reviews
Description
IRF830 . SiHF830. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. Description. Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, IRF830 . N-Channel 500V-1.35 - 4.5A TO-220. PowerMESHTM MOSFET www.artschip.com. 1. TYPE. VDSS. RDS(on). ID. IRF830 . 500V. <1.5 . 4.5A. . VGS. Gate-Souse Voltage. 20. V. EAS. Single Pulse Avalanche Energy (note2). 280. mJ. IAR. Avalanche Current (note 1). 4.5. A. EAR. Repetitive Avalanche . N-Channel Enhancement Mode Field Effect Transistor. 1 . 2 . 3 . . 4
| Part Number | IRF830 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 4.5A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 2.7A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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