Vishay

Description

Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. Gate to Emitter Voltage. VGE. -. -. +/-20. V. Gate-Emitter Leakage Current, VGE = +/-20V. IGES. -. -. +/- 100. nA. Gate Threshold Voltage, IC=2mA. VGE(TH). 4.0. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not. Introduction. A common use of IR Standard Speed IGBTs is in the output inverter stage of the AC TIG1 welding machines. IR has designed application specific