Description
DIODE GEN PURP 1KV 1A DO214AA Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V (1kV) Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery = 200mA (Io) Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -50~C ~ 150~C
Part Number | ER1M-TP |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Vishay |
Description | DIODE GEN PURP 1KV 1A DO214AA |
Series | - |
Packaging | Cut Tape (CT) |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 100ns |
Current - Reverse Leakage @ Vr | 5µA @ 1000V |
Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | DO-214AA, SMB |
Supplier Device Package | DO-214AA, HSMB |
Operating Temperature - Junction | -50°C ~ 150°C |
Image |
ER1M-TP
Vishay Thin Film
8000
1.32
MY Group (Asia) Limited
ER1M-TP
VISH
10000
2.95
LANTEK INT'L TRADE LIMITED