Part Number | CSD19535KTT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 200A TO263 |
Series | NexFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7930pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DDPAK/TO-263-3 |
Package / Case | TO-263-4, D²ÂPak (3 Leads + Tab), TO-263AA |
Image |
Hot Offer
CSD19535KTT
Vishay Siliconix
1000
5.17
HongKong XingYiLong Electronic Technology Co., Limited
CSD19535KTT
Vishay Thin Film
12000
1.52
MeiChuangXinKe (SZ) Electronics Co., Ltd.
CSD19535KTT
VISH
5310
2.4325
Antony Electronic Ltd.
CSD19535KTT
Vishay / BC Components
1000
3.345
HK FEILIDI ELECTRONIC CO., LIMITED
CSD19535KTT
VISHAY GENERAL
3139
4.2575
N&S Electronic Co., Limited