(5/5) based on 12 customer reviews
Description
DATASHEET The AON6428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS The AON6428L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS AOS Semiconductor. Product Reliability Report. AON6428 / AON6428L , rev A. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc. 495 Mercury AON6428 Marking Description. DFN5X6 PACKAGE MARKING DESCRIPTION. NOTE: LOGO - AOS Logo. 6428 - Part number code. F - Fab code. A - Assembly AOS Semiconductor. Product Reliability Report. AON6428 , rev C. Plastic Encapsulated Device. ALPHA & OMEGA Semiconductor, Inc www.aosmd.com
| Part Number | AON6428L |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 30V 11A 8DFN |
| Series | - |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 43A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (5x6) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Image |  |
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