(4/5) based on 3 customer reviews
Description
The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses. UTCs advanced technology to provide the customers with high BVCEO and high DC current gain Jan 1, 2013 2SA1013 -O. PNP. Epitaxial Silicon. Transistor. Features. Capable of 0.9Watts of Power Dissipation. Collector-current -1.0A. Collector-base Parameter. Symbol. Value. Unit. Collector-base voltage. VCBO. -220. V. Collector -emitter voltage. VCEO. -200. V. Emitter-base voltage. VEBO. -5. V. Peak pulse VCEO. Collector-Emitter Voltage. -160. V. VEBO. Emitter-Base Voltage. -6. V. IC. Collector Current -Continuous. -1. A. PC. Collector Power Dissipation. 0.9. W. capable of delivering 265mW of continuous average. No Output Coupling Capacitors, Bootstrap power into an 8 load with 1% THD+N from a 3.3V. Capacitors
| Part Number | 2SA1013 |
| Brand | Vishay |
| Image |  |
2SA1013 SOT-89-3L Y(160-320)
Vishay Thin Film
1000
1.33
Beijing jingbei Components Co.,Ltd
2SA1013(Y)
VISH
150
2.0625
Xian Neng Technology (Hongkong) International Limited
2SA1013
Vishay / BC Components
10000
2.795
Hong Kong Capital Industrial Co.,Ltd
2SA1013
VISHAY GENERAL
1000
3.5275
Antony Electronic Ltd.
2SA1013
Vishay Siliconix
12000
4.26
HK Niuhuasi Technology Limited
