(5/5) based on 17 customer reviews
Description
2N7000 /D. 2N7000G. Small Signal MOSFET. 200 mAmps, 60 Volts. N Channel TO 92. Features. AEC Qualified. PPAP Capable. This is a Pb Free Device*. Marking. Package. Packaging. 2N7000 . 2N7000G. TO-92. Bulk. 2N7002. ST2N. SOT23-3L. Tape and reel www.st.com. Obsolete Product(s) - Obsolete Product(s) General Description. The Supertex 2N7000 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and. Supertexs well-proven 2N7000 /2N7002, VQ1000J/P, BS170. Vishay Siliconix. Document Number: 70226. S-04279 Rev. F, 16-Jul-01 www.vishay.com. 11-1. N-Channel 60-V ( D-S) DESCRIPTION. The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be
| Part Number | 2N7000 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 60V 200MA TO-92 |
| Series | - |
| Packaging | Tape & Box (TB) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Image |  |
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