(5/5) based on 3 customer reviews
Description
2N4338 2N4341. FEATURES. Exceptionally High Figure of Merit. Radiation Immunity. Extremely Low Noise and Capacitance. High Input Impedance. The CENTRAL SEMICONDUCTOR 2N4338 Series devices are silicon N- Channel JFETs mounted in a hermetically sealed metal case designed for low level,. Mar 10, 1997 10. TJ = 55_C. 125_C. SST/J202 Max. 2N4338 Max. SST/J202 Min. 2N4339 Min. SST/J201 Max. SST/J201. 2N4338 Min. VDD. 0.5. 5. 25_C. Mar 10, 1997 TO-226AA (TO-92). Plastic. TO-236 (SOT-23). Surface Mount. Low current/low voltage amplifier. 2N4338 /2N4339. J201/J204. SST201/SST204. The 2N4338 JFET acts as a variable resistor whose resistance changes according its the gate-source voltage bias. Changing the bias of the JFET adjusts the
| Part Number | 2N4338 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - JFETs |
| Brand | Vishay |
| Description | MOSFET N-CH 50V 600UA TO-206AA |
| Series | - |
| Packaging | Bulk |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 50V |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 200µA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 300mV @ 100nA |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Resistance - RDS(On) | - |
| Power - Max | 300mW |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-206AA (TO-18) |
| Image |  |
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