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Description
C. NOTE: Stresses above those listed under Absolute Maximum. Ratings may cause permanent damage to the device. These are stress ratings only and Very low leakage can be achieved by using a diode-connected FET as shown. The 2N4117A is specified at 1 pA and its metal case shields the junction from Feb 18, 2011 Source together), such as 2N4117A . In applications where speed is important, silicon Schottky barrier diodes are worth considering, since they PUBLISHED BY NTERNATIONAL RECTIFIFF, 233 KANSAS STREET, FL SEGUNDO, CA 90245 (213) : Z2-2000. AN-976. Understanding and Using Power. INTRODUCTION. Sensing and/or controlling current flow is a fundamen- tal requirement in many electronics systems, and the techniques to do so are as diverse
| Part Number | 2N4117A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - JFETs |
| Brand | Vishay |
| Description | MOSFET N-CH 40V 30UA TO-206AF |
| Series | - |
| Packaging | Bulk |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 30µA @ 10V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 600mV @ 1nA |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
| Resistance - RDS(On) | - |
| Power - Max | 300mW |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-206AF (TO-72) |
| Image |  |
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