Description
Datasheet 1N5059, 1N5060 , 1N5061, 1N5062 www.vishay.com. Vishay Semiconductors. Rev. 1.7, 12-Sep-12. 1. Document Number: 86000. For technical questions within 1N5060 1N5062. GLASS PASSIVATED. SILICON RECTIFIERS. 1.0 AMP, 200 THRU 800 VOLT. DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 Jan 7, 2003 2, 3. 1N4937GP. BYW36. 2, 3. 1N4946GP. BYW36. 2, 3. 1N5059GP. BYT51D. 3. 1N5060 . 1N5060 . 1. 1N5060GP. 1N5060 . 3. 1N5061. 1N5061. Dec 31, 2004 Controlled avalanche rectifier. 933251860113. T. M. 3. 30-Jun-05. 31-Dec-05 None. 3 1N5060 . Controlled avalanche rectifier. 933251860133. Rectifiers, General Purpose. 1.0 to 250 Amperes. 50 to 1600 Volts www. centralsemi.com. * Also available in DO-41SP Case (0.6mm lead diameter) with Radial
Part Number | 1N5060 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Vishay |
Description | DIODE GEN PURP 400V 1A GPR-1A |
Series | - |
Packaging | Cut Tape (CT) |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 400V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 5µA @ 400V |
Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | R-1 (Axial) |
Supplier Device Package | GPR-1A |
Operating Temperature - Junction | -65°C ~ 175°C |
Image |
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