Description
1N4150 www.vishay.com. Vishay Semiconductors. Rev. 1.8, 05-Dec-13. 1. Document Number: 85522. For technical questions within your region: 1. Revision Date: 12/7/2009. New Product. Silicon Switching Diodes. 1N4150 , 1N4150 -1 & 1N3600. Maximum Ratings. Operating & Storage Temperature: 1N4150 . 1N4607. Note 1: Per Method 4031-A with IF = 10 mA,Vr = 6 V, RL = 100 Ohms. * UNLESS OTHERWISE SPECIFIED. Reverse Recovery time (note 1) trr. Dec 31, 2000 30-06-01. 31-12-01. Vishay : 1N4150 , Rohm : 1N4150 Standard End of Life, Consult Marketing. 5 1N4150 . High-speed diode. 933121460133. Apr 21, 2009 CPD41-CMPD4150-WS. CPD41-CMPD914-WN. CPD41-1N3600-WN. CPD41- 1N4148-CT. CPD41- 1N4150 -CT. CPD41- 1N4150 -WN.
Part Number | 1N4150 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Vishay |
Description | DIODE GEN PURP 50V 200MA DO35 |
Series | - |
Packaging | Tape & Reel (TR) |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 50V |
Current - Average Rectified (Io) | 200mA |
Voltage - Forward (Vf) (Max) @ If | 1V @ 200mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | 6ns |
Current - Reverse Leakage @ Vr | 100nA @ 50V |
Capacitance @ Vr, F | 2.5pF @ 0V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-204AH, DO-35, Axial |
Supplier Device Package | DO-35 |
Operating Temperature - Junction | -65°C ~ 200°C |
Image |
1N4150
Vishay Thin Film
240000
0.93
Bonase Electronics (HK) Co., Limited
1N4150
VISH
2660
2.3575
HK HEQING ELECTRONICS LIMITED
1N4150
Vishay / BC Components
5230
3.785
Dedicate Electronics (HK) Limited
1N4150
VISHAY GENERAL
114193
5.2125
Cicotex Electronics (HK) Limited
1N4150
Vishay Siliconix
10000
6.64
Belt (HK) Electronics Co